MMBT8550 pnp silicon epitaxial planar transistor for switching and amplifier applications. as complementary type the npn transistor mmbt8050 is recommended. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage -v cbo 40 v collector emitter voltage -v ceo 25 v emitter base voltage -v ebo 6 v collector current -i c 600 ma power dissipation p tot 350 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. typ. max. unit dc current gain at -v ce = 1 v, -i c = 100 ma at -v ce = 1 v, -i c = 500 m a MMBT8550c MMBT8550d h fe h fe h fe 100 160 40 - - - 250 400 - - - - collector base cutoff current at -v cb = 35 v -i cbo - - 100 na collector base breakdown voltage at -i c = 10 a -v (br)cbo 40 - - v collector emitter breakdown voltage at -i c = 2 ma -v (br)ceo 25 - - v emitter base breakdown voltage at -i e = 100 a -v (br)ebo 6 - - v collector emitter saturation voltage at -i c = 500 ma, -i b = 50 ma -v ce(sat) - - 0.5 v base emitter saturation voltage at -i c = 500 ma, -i b = 50 ma -v be(sat) - - 1.2 v gain bandwidth product at -v ce = 5 v, -i c = 10 ma f t - 100 - mhz sot-23 plastic package
MMBT8550
|
